PART |
Description |
Maker |
EPC-525-2.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-0.5-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-470-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-440-3.6 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-880-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-440-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-0.22-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-1.0-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
KIP-107-1 |
1.25G InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|
S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Photonics
|